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FR691-1003-502H Microcircuit Memory by Bae Systems Maritime Services with NSN 5962-01-238-6198 - Buy Now!

Mfg Part Number: FR691-1003-502H

Alternate P/N:FR6911003502H
Thank you for your interest in FR691-1003-502H under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number FR691-1003-502H, and it is manufactured by Bae Systems Maritime Services. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of FR691-1003-502H Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962012386198. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Bae Systems Maritime Services. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

Characteristics Data of NSN 5962-01-238-6198, 5962012386198

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 925 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 520 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 172 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING570 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATIONDISPLAY ASSEMBL 84-27401-001
MEMORYCBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND FAST SETTLING AND WRESISTOR
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN9 INPUT
MEMORYCRTLCRITICALITY CODE JUSTIFICATIONFEAT
MEMORYCWSGTERMINAL SURFACE TREATMENTGOLD
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC2500 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 2500 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYCZZZMEMORY CAPACITYUNKNOWN
MEMORYFEATSPECIAL FEATURESNUCLEAR HARDNESS CRITICAL ITEM
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYTTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT

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