Part 314107P2 With Different Manufacturers

314107P2

Advanced Micro Devices Inc

Microcircuit Memory

NSN: 5962011997521

CAGE Code: 34335

RFQ

314107P2

Sgs Thomson Microelectronics Inc

Microcircuit Memory

NSN: 5962011997521

CAGE Code: 60911

RFQ

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314107P2 Microcircuit Memory by Bae Systems Information And Electronic Systems Integration Inc with NSN 5962-01-199-7521 - Buy Now!

Mfg Part Number: 314107P2

Manufacturer: Bae Systems Information And Electronic Systems Integration Inc

NSN :5962-01-199-7521

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in 314107P2 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 314107P2, and it is manufactured by Bae Systems Information And Electronic Systems Integration Inc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number 314107P2 with NSN 5962-01-199-7521, 5962011997521

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-199-7521 Item Description: Microcircuit Memory	5962	011997521	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
314107p2	5	2	3

Characteristics Data of NSN 5962-01-199-7521, 5962011997521

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 985 INCHES MINIMUM AND 1 015 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 305 INCHES MINIMUM AND 0 325 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 068 INCHES MINIMUM AND 0 108 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND 3-STATE OUTPUT AND HIGH IMPEDANCE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN17 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-3 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC90 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT

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314-00-019	314-000-001L000	314-00-1002	314-00-40
314-00-007A	314-00-005	314-00-006	314-00-006
314-00-1002	314-00-005	314-00-019	314-00-5001

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