Part 1280PALC22V10-2 With Different Manufacturers

1280PALC22V10-2

Dla Land And Maritime

Microcircuit Memory

NSN: 5962013711421

CAGE Code: 67268

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1280PALC22V10-2 Microcircuit Memory by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-371-1421 - Buy Now!

Mfg Part Number: 1280PALC22V10-2

Alternate P/N:1280PALC22V102

Manufacturer: Bae Systems Information And Electronic Systems Integration I

NSN :5962-01-371-1421

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in 1280PALC22V10-2 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 1280PALC22V10-2, and it is manufactured by Bae Systems Information And Electronic Systems Integration I. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number 1280PALC22V10-2 with NSN 5962-01-371-1421, 5962013711421

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-371-1421 Item Description: Microcircuit Memory	5962	013711421	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
1280palc22v10-2	5	2	3

Characteristics Data of NSN 5962-01-371-1421, 5962013711421

MRC	Criteria	Characteristic
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQZP	INPUT CIRCUIT PATTERN22 INPUT
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC40 00 NANOSECONDS NOMINAL ACCESS
MEMORY	ZZZX	DEPARTURE FROM CITED DESIGNATORALTERED BY PROGRAMMINGTESTING & MARKING
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDCOMPATIBLE CMOS AND MONOLITHIC AND PROGRAMMED AND ULTRAVIOLET ERASABLE
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-9 MIL-M-38510
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-2 0 VOLTS MINIMUM ABSOLUTE INPUT AND 7 0 VOLTS MAXIMUM ABSOLUTE INPUT
MEMORY	ZZZP	PURCHASE DESCRIPTION IDENTIFICATION72314-1280PALC22V10-2
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC16 00 MILLIAMPERES REVERSE CURRENT DC NOMINAL
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS UV ERASABLEPROGRAMMABLE ARRAY LOGICMONOLITHIC SILICON
MEMORY	CZES	HYBRID TECHNOLOGY TYPEMONOLITHIC
MEMORY	TEST	TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 2 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONCONVERTSIGNDA EI FSCM 72314
MEMORY	CQWX	OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CZER	MEMORY DEVICE TYPEPAL
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
MEMORY	ZZZK	SPECIFICATIONSTANDARD DATA67268-5962-8753903LA GOVERNMENT STANDARD

Related NSN Parts to 1280PALC22V10-2

128-000-005L000	128-0000	128-000-002L000	128-000-001L999
128-000-004L000	128-000-004L999	128-0000-901	128-000
128-000-0001-02	128-00-162	128-000-002L999	128-00-162
128-00-C4000	128-0000-901	128-000-003L000	128-000-001L000

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