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| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQZP | INPUT CIRCUIT PATTERN18 INPUT |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
| MEMORY | ADAU | BODY HEIGHT0 130 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND WENABLE |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
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