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231178-002 Microcircuit Memory by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-200-0985 - Buy Now!

Mfg Part Number: 231178-002

Alternate P/N:231178002
Thank you for your interest in 231178-002 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 231178-002, and it is manufactured by Bae Systems Information And Electronic Systems Integration I. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of 231178-002 Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962012000985. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Bae Systems Information And Electronic Systems Integration I. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

NSN Information for Part Number 231178-002 with NSN 5962-01-200-0985, 5962012000985

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-200-0985

Item Description:

Microcircuit Memory

59620120009850NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberISCRNVCRNCCHCCMSDSSADC
231178-002223

Characteristics Data of NSN 5962-01-200-0985, 5962012000985

MRCCriteriaCharacteristic
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING935 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYAGAVEND ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANALR-56C
MEMORYCBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND BIPOLAR
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN14 INPUT
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 2 VOLTS MINIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE
MEMORYCZERMEMORY DEVICE TYPEROM
MEMORYTESTTEST DATA DOCUMENT81413-231178 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI
MEMORYTTQYTERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT
MEMORYADAQBODY LENGTH1 060 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 185 INCHES MAXIMUM

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