201842-001 Microcircuit Memory by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-199-9161 - Buy Now!

Mfg Part Number: 201842-001

Alternate P/N:201842001

Manufacturer: Bae Systems Information And Electronic Systems Integration I

NSN :5962-01-199-9161

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in 201842-001 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 201842-001, and it is manufactured by Bae Systems Information And Electronic Systems Integration I. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number 201842-001 with NSN 5962-01-199-9161, 5962011999161

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-199-9161 Item Description: Microcircuit Memory	5962	011999161	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
201842-001	1	2	3

Characteristics Data of NSN 5962-01-199-9161, 5962011999161

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 290 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 210 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING855 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS
MEMORY	AGAV	END ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANALR-56C
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND ERASABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND WENABLE AND BIDIRECTIONAL
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN21 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 6 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 300 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT81413-201842 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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