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312234-003 Microcircuit Memory by Bae Systems Information And Electronic Systems Integration I with NSN 5962-01-197-8703 - Buy Now!

Mfg Part Number: 312234-003

Alternate P/N:312234003
Thank you for your interest in 312234-003 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 312234-003, and it is manufactured by Bae Systems Information And Electronic Systems Integration I. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of 312234-003 Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962011978703. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Bae Systems Information And Electronic Systems Integration I. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

NSN Information for Part Number 312234-003 with NSN 5962-01-197-8703, 5962011978703

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-197-8703

Item Description:

Microcircuit Memory

59620119787030NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
312234-003123

Characteristics Data of NSN 5962-01-197-8703, 5962011978703

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 960 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 185 INCHES NOMINAL
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1200 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED
MEMORYCQSJINCLOSURE MATERIALCERAMIC AND GLASS
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORYCQWXOUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN16 INPUT
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-3 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYFEATSPECIAL FEATURESBIT QUANTITY 4096 WORD QUANTITY 1024
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYTTQYTERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT

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