Part 201924-001 With Different Manufacturers

201924-001

Advanced Micro Devices Inc

Microcircuit Memory

NSN: 5962012440622

CAGE Code: 34335

RFQ

201924-001

Dla Land And Maritime

Microcircuit Memory

NSN: 5962012440622

CAGE Code: 67268

RFQ

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201924-001 Microcircuit Memory by Bae Systems Information And Electronic Systems Integration I with NSN 5962-00-359-7193 - Buy Now!

Mfg Part Number: 201924-001

Alternate P/N:201924001

Manufacturer: Bae Systems Information And Electronic Systems Integration I

NSN :5962-00-359-7193

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in 201924-001 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 201924-001, and it is manufactured by Bae Systems Information And Electronic Systems Integration I. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number 201924-001 with NSN 5962-00-359-7193, 5962003597193

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-00-359-7193 Item Description: Microcircuit Memory	5962	003597193	0	N	D
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		D	G	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
201924-001	1	1	C			A

Characteristics Data of NSN 5962-00-359-7193, 5962003597193

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 765 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 240 INCHES MINIMUM AND 0 280 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 180 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING400 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND HERMETICALLY SEALED AND WSTORAGE AND WTOTEM POLE OUTPUT AND WENABLE AND WCOMPLEMENT AND POSITIVE OUTPUTS
MEMORY	CQSJ	INCLOSURE MATERIALGLASS AND METAL
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CWSG	TERMINAL SURFACE TREATMENTGOLD
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MAXIMUM POWER SOURCE AND 5 5 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	PMLC	PRECIOUS MATERIAL AND LOCATIONTERMINAL AND TOP AND BOTTOM BODY SURFACES GOLD
MEMORY	PRMT	PRECIOUS MATERIALGOLD
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

Related NSN Parts to 201924-001

201-0-2-23	201-0.75IN IT 8	201-00	201-00
201-00-010	201-00-012-02	201-00-010	201-00-20K
201-0-2-22	201 00 1K	201-0-2-22	201 0
201 00 018	201-0.75IN IT 9	201-0.75IN	201-0.75IN IT 7

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