AB 1 30 9835 Microcircuit Memory by Bae Systems Gcs International Ltd with NSN 5962-01-350-2139 - Buy Now!

Mfg Part Number: AB 1 30 9835

Alternate P/N:AB1309835

Manufacturer: Bae Systems Gcs International Ltd

NSN :5962-01-350-2139

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in AB 1 30 9835 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number AB 1 30 9835, and it is manufactured by Bae Systems Gcs International Ltd. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number AB 1 30 9835 with NSN 5962-01-350-2139, 5962013502139

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-350-2139 Item Description: Microcircuit Memory	5962	013502139	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
Ab 1 30 9835	5	2	5

Characteristics Data of NSN 5962-01-350-2139, 5962013502139

MRC	Criteria	Characteristic
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CXCY	PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITSDIGITALBIPOLARFIRST-IN FIRST-OUT
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM INPUT
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT
MEMORY	ADAT	BODY WIDTH0 310 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING990 0 MILLIWATTS
MEMORY	CQZP	INPUT CIRCUIT PATTERN7 INPUT
MEMORY	CTQX	CURRENT RATING PER CHARACTERISTIC100 00 MILLIAMPERES MAXIMUM OUTPUT SINK
MEMORY	ADAQ	BODY LENGTH0 960 INCHES MAXIMUM
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510
MEMORY	AFGA	OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDMONOLITHIC AND BIPOLAR
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC
MEMORY	CZER	MEMORY DEVICE TYPEFIRST-IN FIRST-OUT
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC

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