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312A3438P3 Microcircuit Memory by Bae Systems Controls Inc with NSN 5962-01-347-2248 - Buy Now!

Mfg Part Number: 312A3438P3


Manufacturer: Bae Systems Controls Inc
Thank you for your interest in 312A3438P3 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 312A3438P3, and it is manufactured by Bae Systems Controls Inc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of 312A3438P3 Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962013472248. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Bae Systems Controls Inc. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

NSN Information for Part Number 312A3438P3 with NSN 5962-01-347-2248, 5962013472248

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-347-2248

Item Description:

Microcircuit Memory

59620134722480NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
312a3438p3515

Characteristics Data of NSN 5962-01-347-2248, 5962013472248

MRCCriteriaCharacteristic
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING550 0 MILLIWATTS
MEMORYAFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND MONOLITHIC AND POSITIVE OUTPUTS
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONLEADLESS FLAT PACK
MEMORYCTFTCASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510
MEMORYCTQXCURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM SUPPLY
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORYABHPOVERALL LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM
MEMORYADAQBODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 060 INCHES MINIMUM AND 0 075 INCHES MAXIMUM
MEMORYAFGAOPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORYCQZPINPUT CIRCUIT PATTERN14 INPUT
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZERMEMORY DEVICE TYPEPROM
MEMORYTTQYTERMINAL TYPE AND QUANTITY28 LEADLESS
MEMORYCQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCZEQTIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM ACCESS
MEMORYABKWOVERALL HEIGHT0 060 INCHES MINIMUM AND 0 075 INCHES MAXIMUM
MEMORYABMKOVERALL WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC

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