Part 311A7928P22 With Different Manufacturers

311A7928P22

Dla Land And Maritime

Microcircuit Memory

NSN: 5962011683365

CAGE Code: 16236

RFQ

311A7928P22

Philips Semiconductors Ltd

Microcircuit Memory

NSN: 5962011683365

CAGE Code: 18324

RFQ

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311A7928P22 Microcircuit Memory by Bae Systems Controls Inc with NSN 5962-01-168-3365 - Buy Now!

Mfg Part Number: 311A7928P22

Manufacturer: Bae Systems Controls Inc

NSN :5962-01-168-3365

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in 311A7928P22 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 311A7928P22, and it is manufactured by Bae Systems Controls Inc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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NSN Information for Part Number 311A7928P22 with NSN 5962-01-168-3365, 5962011683365

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-168-3365 Item Description: Microcircuit Memory	5962	011683365	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
311a7928p22	2	2	5

Characteristics Data of NSN 5962-01-168-3365, 5962011683365

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH1 290 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 150 INCHES MINIMUM AND 0 210 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING950 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND WENABLE AND 3-STATE OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN14 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS NOMINAL POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEROM
MEMORY	TEST	TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT

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