Part PL520D01003001 26 With Different Manufacturers

PL520D01003001 26

Intel Corporation

Microcircuit Memory

NSN: 5962014352112

CAGE Code: 34649

RFQ

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PL520D01003001 26 Microcircuit Memory by Bae Systems Australia Ltdco Dlm Secure Room with NSN 5962-01-435-2112 - Buy Now!

Mfg Part Number: PL520D01003001 26

Alternate P/N:PL520D0100300126

Manufacturer: Bae Systems Australia Ltdco Dlm Secure Room

NSN :5962-01-435-2112

Item Name : microcircuit memory

FSC :5962 Microcircuits Electronic

Thank you for your interest in PL520D01003001 26 under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number PL520D01003001 26, and it is manufactured by Bae Systems Australia Ltdco Dlm Secure Room. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of PL520D01003001 26 Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962014352112. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Bae Systems Australia Ltdco Dlm Secure Room. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

Characteristics Data of NSN 5962-01-435-2112, 5962014352112

MRC	Criteria	Characteristic
AFGA	OPERATING TEMP RANGE	-55.0 TO 125.0 DEG CELSIUS
CZER	MEMORY DEVICE TYPE	EEPROM
CQSJ	INCLOSURE MATERIAL	CERAMIC
TTQY	TERMINAL TYPE AND QUANTITY	32 PIN
CQSZ	INCLOSURE CONFIGURATION	DUAL-IN-LINE
CQWX	OUTPUT LOGIC FORM	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC

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