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| MRC | Criteria | Characteristic |
|---|---|---|
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 256 |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 LEADLESS |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| CRHL | (NON-CORE DATA) BIT QUANTITY | 1024 |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 495.0 MILLIWATTS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| R910-3 | R910-15 | R91-5N | R91 3N |
| R91-702 | R910-2 | R910-2 | R910-001 |
| R910-14 | R910 | R91-147 | R910-2 |
| R910-2 | R910 | R910-1 | R910-001 |
 |
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