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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-451-1878 Item Description: Microcircuit Memory | 5962 | 014511878 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
AT28C17 25DM 883 | 5 | 9 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
CRHL | (NON-CORE DATA) BIT QUANTITY | 16384 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CSWJ | (NON-CORE DATA) WORD QUANTITY | 2048 |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 16K (2K X 8) CMOS EEPROM |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
AGAV | III END ITEM IDENTIFICATION | 1430-01-378-6963 GUIDE MISSILE BATTERY CONTROL |
CBBL | FEATURES PROVIDED | TESTED TO MIL-STD-883 AND 3-STATE OUTPUT |
TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL INPUT |
CZER | MEMORY DEVICE TYPE | EEPROM |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
AT2-300-973 | AT2-8B062-1606 | AT2 5 100T1MPM | AT2-46-G |
AT200 | AT20-109A | AT2-300-973 | AT2-222-W2-202 |
AT2-46-G | AT200-1 | AT2-PA6 | AT20-50 |
AT200-1 | AT20-109A | AT2-8B062-1606 | AT2-8B062-1606 |
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