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MRC | Criteria | Characteristic |
---|---|---|
CBBL | FEATURES PROVIDED | BURN IN, MIL-STD-883, CLASS C AND ERASABLE AND HIGH PERFORMANCE AND HIGH SPEED |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PIN |
FEAT | SPECIAL FEATURES | PROPAGATION DELAY SPEED 25.0 NANOSECONDS |
CZER | MEMORY DEVICE TYPE | PROGRAMMABLE |
AT2-46-G | AT2-PA6 | AT200 | AT2-46-G |
AT20-50 | AT200-1 | AT2 5 100T1MM | AT2-300-973 |
AT20-50 | AT2-8B062-1606 | AT2 5 100T1MPM | AT2-8B062-1606 |
AT200 | AT2-8B062-1606 | AT2-300-973 | AT2-222-W2-202 |
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