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MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 540 INCHES MINIMUM AND 0 560 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 458 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 120 INCHES MAXIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT AND POSITIVE OUTPUTS |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CRHL | BIT QUANTITY16384 |
MEMORY | CSWJ | WORD QUANTITY2048 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 LEADLESS |
AM2-0-50 | AM2-0-15A | AM2-0-150MA | AM2-0-50VDC |
AM2-0-40V | AM2-0-15A | AM2-0-150MA | AM2-0-50 |
AM2-0-10V | AM2-0-50 | AM2-0-50VDC | AM2-0-30A |
AM2-0-30A | AM2-0-30A | AM2-0-40V | AM2-0-12A |
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