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    //   NSN   //   Advanced Micro Devices Inc   //   Part 91L02DM B

Part 91L02DM-B With Different Manufacturers

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91L02DM-B Microcircuit Memory by Advanced Micro Devices Inc with NSN 5962-01-043-6195 - Buy Now!

Mfg Part Number: 91L02DM-B
Alternate P/N:91L02DMB
Manufacturer: Advanced Micro Devices Inc
NSN :5962-01-043-6195
Item Name : microcircuit memory
FSC :5962 Microcircuits Electronic
Thank you for your interest in 91L02DM-B under FSC5962 Microcircuits Electronic NSN part on ASAP Global Supplies. Microcircuit Memory is listed under the part number 91L02DM-B, and it is manufactured by Advanced Micro Devices Inc. This item, alongside our other listed NSN parts, is available for purchase today through our website. If you are interested in this particular item, we invite you to fill out and submit the Request for Quote form as provided through our website. Once received, a member of our staff will review and respond in 15 minutes or less to provide a personalized quote based on your individual needs.

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ASAP Global Supplies is a website owned and operated by ASAP Semiconductor, and we are a leading independent supplier of 91L02DM-B Microcircuit Memory NSN part that serve a variety of applications. We invite you to explore our NSN part catalogues at your leisure to find a plethora of top requested items, such as 5962010436195. We uphold a strict no China sourcing policy, choosing instead to stock our inventory from top global manufacturers such as Advanced Micro Devices Inc. Due to our commitment to quality standards and guidelines, we operate as an FAA AC 00-56B, AS9120B, and ISO 9001:2015 certified enterprise. Get started today on the purchasing process and see how ASAP Global Supplies can fulfill all of your operational needs with ease.

Characteristics Data of NSN 5962-01-043-6195, 5962010436195

MRCCriteriaCharacteristic
TTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7.0 VOLTS MAXIMUM POWER SOURCE
CQWXOUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND LOW POWER AND W/STORAGE AND W/DECODED OUTPUT
CZEQTIME RATING PER CHACTERISTIC200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CQSJINCLOSURE MATERIALCERAMIC AND GLASS
CQZPINPUT CIRCUIT PATTERN13 INPUT
ADATBODY WIDTH0.278 INCHES MINIMUM AND 0.298 INCHES MAXIMUM
CSWJ(NON-CORE DATA) WORD QUANTITY1024
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CZZZMEMORY CAPACITYUNKNOWN
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
AEHXMAXIMUM POWER DISSIPATION RATING260.0 MILLIWATTS
CRHL(NON-CORE DATA) BIT QUANTITY1024
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZERMEMORY DEVICE TYPERAM
ADAUBODY HEIGHT0.085 INCHES MINIMUM AND 0.124 INCHES MAXIMUM
ADAQBODY LENGTH0.770 INCHES MINIMUM AND 0.808 INCHES MAXIMUM

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